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| HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 130N30 D VDSS = 300 V ID25 = 130 A RDS(on) = 22 m trr < 250 ns G S S Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C Terminal (current limit) TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 300 300 20 30 130 100 520 100 85 4 5 700 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features W C C C V~ V~ * International standard packages * miniBLOC, with Aluminium nitride * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) * Low package inductance * Fast intrinsic Rectifier Applications rated isolation 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2 4 200 TJ = 25C TJ = 125C 100 2 V V nA A mA * DC-DC converters * Battery chargers * Switched-mode and resonant-mode * DC choppers * Temperature and lighting controls Advantages power supplies VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % 22 m * Easy to mount * Space savings * High power density (c) 2003 IXYS All rights reserved DS98531F(01/03) IXFN 130N30 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 70 92 14500 VGS = 0 V, VDS = 25 V, f = 1 MHz 2650 610 45 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 75 130 31 380 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 95 180 0.18 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs Ciss Coss Crss td(on) tr td(off) tf QG(on) QGS QGD RthJC RthCK VDS = 10 V; ID = 60A, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 130 520 1.5 A A V IF = 100A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 30A, -di/dt = 100 A/s, VR = 100 V 0.8 8 250 n s C A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFN 130N30 250 TJ=25OC 200 VGS=10V 9V 8V 7V TJ=125OC 200 160 6V VGS=10V 9V 8V 7V 6V ID - Amperes ID - Amperes 150 100 5V 120 80 40 0 5V 50 0 0 4 8 12 16 0 4 8 12 16 20 VDS - Volts VDS - Volts Figure 1. Output Characteristics at 25OC 2.4 2.2 VGS = 10V TJ = 125OC Figure 2. Output Characteristics at 125OC 2.2 2.0 1.8 ID=120A VGS=10V RDS(ON) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 50 100 150 200 250 TJ = 25OC RDS(ON) - Normalized 1.6 1.4 1.2 1.0 25 ID=60A 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 150 125 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ 120 90 ID - Amperes ID - Amperes 100 75 50 25 0 TJ = 125oC 60 30 TJ = 25oC -50 -25 0 25 50 75 100 125 150 0 2 3 4 5 6 TC - Degrees C VGS - Volts Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves (c) 2003 IXYS All rights reserved IXFN 130N30 12 10 VDS = 150V Vds=300V = 65A ID=30A IG=10mA = 10mA 18000 15000 CISS VGS - Volts 8 6 4 2 0 Capacitance - pF f = 100KHz 12000 9000 6000 3000 CRSS COSS 0 100 200 300 400 500 0 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 7. Gate Charge Figure 8. Capacitance Curves 200 160 ID - Amperes 120 TJ = 125OC 80 TJ = 25OC 40 0 0.3 0.6 0.9 1.2 1.5 1.8 VSD - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 0.100 R(th)JC - K/W 0.010 Single Pulse 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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